Circuit Simulation Method for Insulated-Gate Bipolar Transistor Short-Circuit Operation with High Accuracy
نویسندگان
چکیده
In this paper, we propose a novel method to improve the circuit simulation accuracy of insulated-gate bipolar transistor (IGBT) power devices under short-circuit state. To determine IGBT junction temperature, transient thermal resistance an device on order micro seconds is estimated by simulations. The saturation current without self-heating effects based test and resistance. SPICE parameter extracted from characteristics during coupled electrical-thermal simulations with model are applied several evaluations different parasitic impedance gate driving condition, results consistent measured voltage waveforms.
منابع مشابه
A New Protection Circuit of IGBT (Insulated Gate Bipolar Transistor) for Short-Circuit Withstanding Capability
متن کامل
Insulated Gate Bipolar Transistor (IGBT) Basics
IGBT Fundamentals The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device. To make use of the advantages of both Power MOSFET and BJT, the IGBT has been introdu...
متن کاملModelling an Insulated Gate Bipolar Transistor Using Bond Graph Techniques
Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of the bond graph techniques to model modular power semiconductor devices. Furthermore, the IGBT is a ...
متن کاملThree-Dimensional Insulated Gate Bipolar Transistor (IGBT) Development
A new insulated gate bipolar transistor structure, the 3D-IGBT, is presented. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vemcally oriented devices. The 3D-IGBT , unlike other fully integrable power devices, exploits the merits of cellular structure to increase its packing density and thus reduce its on-resistance per...
متن کاملAn Innovative Simple Test Circuit for Single-Phase Short Circuit Making Test of High-Voltage Switching Devices
Nowadays, high-voltage circuit breakers have reached such high short-circuit capabilities that testing them under the full rated voltage is generally not possible with direct tests, and they are conducted by using the synthetic test methods. Although the phenomena associated with making tests is of particular importance especially in case of load break switches, but making tests are rather d...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEJ journal of industry applications
سال: 2023
ISSN: ['2187-1094', '2187-1108']
DOI: https://doi.org/10.1541/ieejjia.21009050