Circuit Simulation Method for Insulated-Gate Bipolar Transistor Short-Circuit Operation with High Accuracy

نویسندگان

چکیده

In this paper, we propose a novel method to improve the circuit simulation accuracy of insulated-gate bipolar transistor (IGBT) power devices under short-circuit state. To determine IGBT junction temperature, transient thermal resistance an device on order micro seconds is estimated by simulations. The saturation current without self-heating effects based test and resistance. SPICE parameter extracted from characteristics during coupled electrical-thermal simulations with model are applied several evaluations different parasitic impedance gate driving condition, results consistent measured voltage waveforms.

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ژورنال

عنوان ژورنال: IEEJ journal of industry applications

سال: 2023

ISSN: ['2187-1094', '2187-1108']

DOI: https://doi.org/10.1541/ieejjia.21009050